Er-coupled Si nanocluster waveguide

被引:42
作者
Daldosso, Nicola [1 ]
Navarro-Urrios, Daniel
Melchiorri, Mirko
Garcia, Cristina
Pellegrino, Paolo
Garrido, Blas
Sada, Cinzia
Battaglin, Giancarlo
Gourbilleau, Fabrice
Rizk, Richard
Pavesi, Lorenzo
机构
[1] Univ Trent, Nanosci Lab, Dept Phys, I-38050 Trento, Italy
[2] Univ Barcelona, Dept Electron, E-08028 Barcelona, Spain
[3] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy
[4] Univ Venice, Dipartimento Chim Fis, I-30123 Venice, Italy
[5] Ecole Natl Super Ingn Caen, SIFCOM, UMR 6176, CNRS, F-14050 Caen, France
[6] Ctr Rech, ENSICAEN, F-14050 Caen, France
关键词
Er amplifier; Si nanocluster; silicon photonics; waveguides;
D O I
10.1109/JSTQE.2006.885141
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Rib-loaded waveguides containing Er3+-coupled Si nanoclusters (Si-nc) have been produced to observe optical gain at 1535 mn. The presence of Si-nc strongly improves the efficiency of Er3+ excitation but may introduce optical loss mechanisms, such as Mic scattering and confined carrier absorption. Losses strongly affect the possibility of obtaining positive optical gain. Si-ne-related losses have been minimized to I dB/cm by lowering the annealing time of the Er3+-doped silicon-rich oxide deposited by reactive magnetron cosputtering. Photoluminescence (PL) and lifetime measurements show that all Er3+ ions are optically active while those that can be excited at high pump rates via Si-nc are only a small percentage. Er3+ absorption cross section is found comparable to that of Er3+ in Sio(2). However, dependence on the effective refractive index has been found. In pump-probe measurements, it is shown how the detrimental role of confined carrier absorption can be attenuated by reducing the annealing time. A maximum signal enhancement of about 1.34 at 1535 nm was measured.
引用
收藏
页码:1607 / 1617
页数:11
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