Characteristics of Mg-doped GaN grown by metallorganic chemical vapor deposition

被引：18

作者：

Eiting, CJ

Grudowski, PA

Park, J

Lambert, DJH

Shelton, BS

Dupuis, RD

机构：

[1] Microelectronics Research Center, University of Texas at Austin, Austin

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1997年 / 144卷 / 08期

关键词：

D O I：

10.1149/1.1837862

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Mg-doped GaN films are grown by metallorganic chemical vapor deposition and characterized by photoluminescence (PL), Hall-effect measurements, and secondary-ion mass spectroscopy (SIMS). Optimum Mg acceptor activation annealing conditions were determined to be 750 degrees C for 10 min in a nitrogen ambient. The free-hole concentration and electrical conductivity of these layers reach their maximum values at relatively low bis(cyclopentadienyl)magnesium (Cp2Mg) flow rates. The PL peak wavelength and intensity also vary with Cp2Mg flow rate, with the shortest emission wavelength and highest intensity occurring in samples with the highest hole concentration and electrical conductivity. SIMS data on n-p-n epitaxial layer's demonstrate abrupt changes in the dopant concentration for Mg.

引用

页码：L219 / L221

页数：3

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