Bi and Te thin films synthesized by galvanic displacement from acidic nitric baths

被引：17

作者：

Chang, Chong Hyun ^{[2
]}

Rheem, Youngwoo ^{[2
]}

Choa, Yong-Ho ^{[3
]}

Shin, Dong Hyuk ^{[3
]}

Park, Deok-Yong ^{[1
]}

Myung, Nosang V. ^{[2
]}

机构：

[1] Hanbat Natl Univ, Dept Appl Mat Engn, Taejon 305719, South Korea

[2] Univ Calif Riverside, Dept Chem & Environm Engn, Riverside, CA 92521 USA

[3] Hanyang Univ, Div Mat & Chem Engn, Ansan 426791, South Korea

来源：

ELECTROCHIMICA ACTA | 2010年 / 55卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

Galvanic displacement; Electroless deposition; Bismuth; Tellurium; Thermoelectric materials; AQUEOUS ALKALINE-SOLUTION; BISMUTH NANOTUBE ARRAYS; LARGE-SCALE SYNTHESIS; ONE-STEP APPROACH; ELECTROLESS DEPOSITION; METAL NANOSTRUCTURES; REPLACEMENT REACTION; TELLURIUM NANOWIRES; SI(100) SURFACES; HOLLOW INTERIORS;

D O I：

10.1016/j.electacta.2009.09.038

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Bismuth (Bi) and tellurium (Te) thin films were formed by galvanic displacement of different sacrificial iron group thin films [i.e. nickel (Ni), cobalt (Co) and iron (Fe)] where the formation was systematically investigated by monitoring the change of open circuit potential (OCP), surface morphology and microstructure. The surface morphologies and crystal structures of galvanically displaced Bi or Te thin films strongly depended on the type and thickness of the sacrificial materials. Continuous Bi thin films were successfully deposited with the sacrificial Co. However, dendrites and nanoplatelets were formed from the Ni and Fe thin films. Te thin films were synthesized with all the three sacrificial thin films. Chemical dissolution rate of the sacrificial thin films and mixed potential strongly influenced formation of Bi or Te thin films. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：743 / 752

页数：10

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