Lattice contraction in nanosized silicon particles produced by laser pyrolysis of silane

被引:76
作者
Hofmeister, H
Huisken, F
Kohn, B
机构
[1] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany
[2] Max Planck Inst Stromungsforsch, D-37073 Gottingen, Germany
关键词
D O I
10.1007/s100530050413
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We used laser-induced decomposition of silane for the fabrication of nanosized Si particles and studied in detail their structural characteristics by conventional and high resolution electron microscopy. The silane gas flow reactor incorporated in a molecular beam apparatus was operated without size selection to achieve a broad size distribution. Deposition at low energy on carbon substrates yielded single crystalline, spherical Si particles almost completely free of planar lattice defects. The particles, covered by thin amorphous oxide shells, are not agglomerated into larger aggregates. The lattice of diamond cubic type exhibits deviations from the bulk spacing which vary from distinct contraction to dilatation as with decreasing particle size the oxide shell thickness is reduced. This effect is discussed in terms of the strong Si/oxide interfacial interaction and compressive stresses arising upon oxidation. A negative interface stress, as determined from the size dependence of the lattice spacing, limits the curvature of the interface, i.e., at small sizes Si oxidation must be considered as a self-limiting process.
引用
收藏
页码:137 / 140
页数:4
相关论文
共 24 条
[1]   PROPERTIES OF DEPOSITED SIZE-SELECTED CLUSTERS - REACTIVITY OF DEPOSITED SILICON CLUSTERS [J].
BOWER, JE ;
JARROLD, MF .
JOURNAL OF CHEMICAL PHYSICS, 1992, 97 (11) :8312-8321
[2]  
DIHN LN, 1996, PHYS REV B, V54, P5029
[3]   LASER-DRIVEN FLOW REACTOR AS A CLUSTER BEAM SOURCE [J].
EHBRECHT, M ;
FERKEL, H ;
SMIRNOV, VV ;
STELMAKH, OM ;
ZHANG, W ;
HUISKEN, F .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1995, 66 (07) :3833-3837
[4]   Gas-phase characterization of silicon nanoclusters produced by laser pyrolysis of silane [J].
Ehbrecht, M ;
Huisken, F .
PHYSICAL REVIEW B, 1999, 59 (04) :2975-2985
[5]   Photoluminescence and resonant Raman spectra of silicon films produced by size-selected cluster beam deposition [J].
Ehbrecht, M ;
Kohn, B ;
Huisken, F ;
Laguna, MA ;
Paillard, V .
PHYSICAL REVIEW B, 1997, 56 (11) :6958-6964
[6]  
Ehbrecht M, 1997, Z PHYS D ATOM MOL CL, V40, P88, DOI 10.1007/s004600050165
[7]   LIGHT-EMITTING POROUS SILICON [J].
GOSELE, U ;
LEHMANN, V .
MATERIALS CHEMISTRY AND PHYSICS, 1995, 40 (04) :253-259
[8]   SURFACE OXIDE LAYERS OF SI AND GE NANOCRYSTALS [J].
HAYASHI, S ;
TANIMOTO, S ;
FUJII, M ;
YAMAMOTO, K .
SUPERLATTICES AND MICROSTRUCTURES, 1990, 8 (01) :13-18
[9]   ANALYSIS OF SURFACE OXIDES OF GAS-EVAPORATED SI SMALL PARTICLES WITH INFRARED-SPECTROSCOPY, HIGH-RESOLUTION ELECTRON-MICROSCOPY, AND X-RAY PHOTOEMISSION SPECTROSCOPY [J].
HAYASHI, S ;
TANIMOTO, S ;
YAMAMOTO, K .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (10) :5300-5308
[10]   IN-SITU INFRARED STUDY OF SURFACE OXIDE FORMATION ON GAS-EVAPORATED SI MICROCRYSTALS [J].
HAYASHI, S ;
KAWATA, S ;
KIM, HM ;
YAMAMOTO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (11A) :4870-4877