Inorganic islands on a highly stretchable polyimide substrate

被引:54
作者
Sun, Jeong-Yun [1 ,2 ]
Lu, Nanshu [1 ]
Yoon, Juil [3 ]
Oh, Kyu-Hwan [2 ]
Suo, Zhigang
Vlassak, Joost J. [1 ]
机构
[1] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA
[2] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea
[3] Hansung Univ, Dept Mech Syst Engn, Seoul 136792, South Korea
基金
美国国家科学基金会;
关键词
THIN-FILMS; SILICON; NETWORKS; CIRCUITS; ELECTRONICS; SENSORS; DOME;
D O I
10.1557/JMR.2009.0417
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
For a flexible electronic device integrating inorganic materials on a polymer substrate, the polymer can deform substantially, but the inorganic materials usually fracture at small strains. This paper describes an approach to make such a device highly stretchable. A polyimide substrate is first coated with a thin layer of an elastomer, on top of which SiNx islands are fabricated. When the substrate is stretched to a large strain, the SiNx islands remain intact. Calculations confirm that the elastomer reduces the strain in the SiNx islands by orders of magnitude.
引用
收藏
页码:3338 / 3342
页数:5
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