Electronic levels in MEH-PPV

被引：25

作者：

Stallinga, P

Gomes, HL

Rost, H

Holmes, AB

Harrison, MG

Friend, RH

机构：

[1] Univ Algarve, Unidad Ciencias Exactas & Humanas, P-8000 Faro, Portugal

[2] Melville Lab Polymer Synth, Cambridge CB2 3RA, England

[3] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

SYNTHETIC METALS | 2000年 / 111卷

关键词：

polymers; traps; DLTS; MEH-PPV;

D O I：

10.1016/S0379-6779(99)00413-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

pn-Junctions of MEH-PPV on top of heavily doped n-type silicon were used in electrical measurements. Through deep-level transient-spectroscopy (DLTS)-like measurements, four traps (two majority and two minority traps) could be identified on top of the shallow acceptor level responsible for conduction. Furthermore, evidence is found for interface states. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

引用

页码：535 / 537

页数：3

共 5 条

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