Hydrogen passivation of nitrogen in GaNAs and GaNP alloys: How many H atoms are required for each N atom?

被引：9

作者：

Buyanova, I. A. ^{[1
]}

Chen, W. M.

Izadifard, M.

Pearton, S. J.

Bihler, C.

Brandt, M. S.

Hong, Y. G.

Tu, C. W.

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden

[2] Shahrood Univ Technol, Dept Phys, Shahrood, Iran

[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[4] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[5] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 02期

关键词：

D O I：

10.1063/1.2425006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Secondary ion mass spectrometry and photoluminescence are employed to evaluate the origin and efficiency of hydrogen passivation of nitrogen in GaNAs and GaNP. The hydrogen profiles are found to closely follow the N distributions, providing unambiguous evidence for their preferential binding as the dominant mechanism for neutralization of N-induced modifications in the electronic structure of the materials. Though the exact number of H atoms involved in passivation may depend on the conditions of the H treatment and the host matrixes, it is generally found that more than three H atoms are required to bind to a N atom to achieve full passivation for both alloys.

引用

页数：3

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