Theory of the breakdown of the quantum Hall effect

被引：58

作者：

Tsemekhman, V

Tsemekhman, K

Wexler, C

Han, JH

Thouless, DJ

机构：

[1] Department of Physics, University of Washington, Seattle, WA 98195

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 16期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevB.55.R10201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Breakdown of the quantum Hall effect at high values of injected current is explained as a consequence of an abrupt formation of a metallic conduction path from one edge of the sample to the other. Such a path is formed when regions of compressible Liquid, where the long-range disorder potential is screened, get connected due to the strong electric field. Our theory explains various features of the breakdown and numerical simulations based on the theory yield critical currents consistent with experiment.

引用

页码：10201 / 10204

页数：4

共 16 条

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