Dislocation effect on light emission efficiency in gallium nitride

被引：166

作者：

Karpov, SY

Makarov, YN

机构：

[1] Soft Impact Ltd, St Petersburg 194156, Russia

[2] Semicond Technol Res Inc, Richmond, VA 23233 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 25期

关键词：

D O I：

10.1063/1.1527225

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We modify the model of nonradiative carrier recombination on threading dislocation cores [Z. Z. Bandic, P. M. Bridger, E. C. Piquette, and T. C. McGill, Solid-State Electron. 44, 221 (2000)] to estimate quantitatively the light emission efficiency in GaN as a function of the dislocation density and nonequilibrium carrier concentration. The model predictions are in good agreement with available data on the minority carrier diffusion length in GaN. The dislocation density must be reduced, at least, down to similar to10(7) cm(-2) in order to provide a light emission efficiency close to unity. The n-type background doping is found to be favorable for the further efficiency improvement. (C) 2002 American Institute of Physics.

引用

页码：4721 / 4723

页数：3

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