Contact-induced defect propagation in ZnO

被引：91

作者：

Bradby, JE ^{[1
]}

Kucheyev, SO

Williams, JS

Jagadish, C

Swain, MV

Munroe, P

Phillips, MR

机构：

[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

[2] Univ Sydney, Dept Mech & Mechatron Engn, Biomat Sci Res Unit, Eveleigh, NSW 1430, Australia

[3] Univ Sydney, Fac Dent, Eveleigh, NSW 1430, Australia

[4] Univ New S Wales, Electron Microscope Unit, Sydney, NSW 2052, Australia

[5] Univ Technol Sydney, Microstruct Anal Unit, Broadway, NSW 2007, Australia

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 24期

关键词：

D O I：

10.1063/1.1486264

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Contact-induced damage has been studied in single-crystal (wurtzite) ZnO by cross-sectional transmission electron microscopy (XTEM) and scanning cathodoluminescence (CL) monochromatic imaging. XTEM reveals that the prime deformation mechanism in ZnO is the nucleation of slip on both the basal and pyramidal planes. Some indication of dislocation pinning was observed on the basal slip planes. No evidence of either a phase transformation or cracking was observed by XTEM in samples loaded up to 50 mN with an similar to4.2 mum radius spherical indenter. CL imaging reveals a quenching of near-gap emission by deformation-produced defects. Both XTEM and CL show that this comparatively soft material exhibits extensive deformation damage and that defects can propagate well beyond the deformed volume under contact. Results of this study have significant implications for the extent of contact-induced damage during fabrication of ZnO-based (opto)electronic devices. (C) 2002 American Institute of Physics.

引用

页码：4537 / 4539

页数：3

共 13 条

[1]

AHEARN JS, 1977, J APPL PHYS, V49, P96

[2] Indentation-induced damage in GaN epilayers [J].

Bradby, JE ;

Kucheyev, SO ;

Williams, JS ;

Wong-Leung, J ;

Swain, MV ;

Munroe, P ;

Li, G ;

Phillips, MR .

APPLIED PHYSICS LETTERS, 2002, 80 (03) :383-385

[3] Mechanical deformation in silicon by micro-indentation [J].

Bradby, JE ;

Williams, JS ;

Wong-Leung, J ;

Swain, MV ;

Munroe, P .

JOURNAL OF MATERIALS RESEARCH, 2001, 16 (05) :1500-1507

[4] Nanoindentation of epitaxial GaN films [J].

Kucheyev, SO ;

Bradby, JE ;

Williams, JS ;

Jagadish, C ;

Toth, M ;

Phillips, MR ;

Swain, MV .

APPLIED PHYSICS LETTERS, 2000, 77 (21) :3373-3375

[5] Mechanical deformation of single-crystal ZnO [J].

Kucheyev, SO ;

Bradby, JE ;

Williams, JS ;

Jagadish, C ;

Swain, MV .

APPLIED PHYSICS LETTERS, 2002, 80 (06) :956-958

[6] Recent advances in ZnO materials and devices [J].

Look, DC .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3) :383-387

[7] NANOINDENTATION OF NANOCRYSTALLINE ZNO [J].

MAYO, MJ ;

SIEGEL, RW ;

LIAO, YX ;

NIX, WD .

JOURNAL OF MATERIALS RESEARCH, 1992, 7 (04) :973-979

[8]

Nause JE, 1999, III-VS REV, V12, P28, DOI 10.1016/S0961-1290(99)80077-5

[9] The plasticity response of 6H-SiC and related isostructural materials to nanoindentation: Slip vs densification [J].

Page, TF ;

Rester, L ;

Hainsworth, SV .

FUNDAMENTALS OF NANOINDENTATION AND NANOTRIBOLOGY, 1998, 522 :113-118

[10] Tribological behavior of nanocrystalline zinc oxide films [J].

Prasad, SV ;

Zabinski, JS .

WEAR, 1997, 203 :498-506

← 1 2 →