Preparation of epitaxial metallic LaNiO3 films on SrTiO3, by metalorganic decomposition for the oriented growth of PbTiO3

Epitaxial metallic LaNiO3 (LNO) films on SrTiO3 (STO) were prepared by metalorganic decomposition. X-ray theta-2 theta scans, x-ray phi scans, and the Rutherford backscattering channeling technique were used to determine the degree of crystallinity of the films. The trend of resistance as a function of annealing temperature of LNO films on STO and Si substrates indicated that LNO films on STO have lower crystalline temperature and higher transition temperature from conductor to insulator than on Si. (001)-oriented PbTiO3 (PT) films were grown on LNO-coated STO by the sol-gel method. Scanning electron microscopy of a cross section of PT/LNO/STO showed sharp boundaries. The ferroelectric capacitor fabricated from these films displayed promising P-E hysteresis characteristics. (C) 1996 American Institute of Physics.