Force driving Cu diffusion into interlayer dielectrics

被引:21
作者
Fukuda, T [1 ]
Nishino, H [1 ]
Matsuura, A [1 ]
Matsunaga, H [1 ]
机构
[1] ASET, Totsuka Ku, Yokohama, Kanagawa 2440817, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2002年 / 41卷 / 5B期
关键词
Cu; diffusion; insulator; I-E characteristics; leakage current; O-2; paramagnetism; magnetic moment; magnetic field; simulation;
D O I
10.1143/JJAP.41.L537
中图分类号
O59 [应用物理学];
学科分类号
摘要
The force driving Cu diffusion into insulators was investigated using a conventional Plasma enhanced chemical vapor deposition (CVD) film formed by Tetraethoxysilane (P-TEOS) and degassed P-TEOS films. The samples of degassed P-TEOS films with Cu electrodes kept in vacuum and N-2 ambient show lower leakage currents than a sample kept in air and that of conventional P-TEOS. An interaction between O-2 molecules included in films and atomic Cu was examined and it was found that an interaction between magnetic moments of atomic Cu and O-2 molecules included in conventional P-TEOS film causes diffusion of Cu into the film.
引用
收藏
页码:L537 / L539
页数:3
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