Change in electrical resistivity associated with the glass transition in a continuously cooled Pd40Cu30Ni10P20 melt

被引:19
作者
Haruyama, O [1 ]
Kimura, H
Inoue, A
Nishiyama, N
机构
[1] Sci Univ Tokyo, Fac Sci & Technol, Dept Phys, Noda, Chiba 2788510, Japan
[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[3] Japan Sci & Technol Corp, ERATO, Inoue Superliquid Glass Project, Sendai, Miyagi 9800807, Japan
关键词
D O I
10.1063/1.126243
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report a reversible change in electrical resistivity accompanied with the glass transition (glass transition temperature T-g = 570 K) in a Pd40Cu30Ni10P20 bulk glass. The bulk glass with a diameter of about 5 mm and length of 30 mm was produced at a maximum cooling rate of 1.2 K/s. This bulk glass showed a negative temperature coefficient of resistivity -0.81 x 10(-4) K-1, at room temperature, -4.17 x 10(-4) K-1 in the supercooled liquid region, and -2.75 x 10(-4) K-1 in the liquid state. The undercooled liquid alloy beyond eutectic temperature T-m = 804 K did not show the onset of crystallization until room temperature. The behavior of resistivity around T-g was in accordance with the heating to and cooling from the melt. This suggests that the amorphous structure might vary reversibly according to the glass transition in the present glass. (C) 2000 American Institute of Physics. [S0003-6951(00)04015-8].
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页码:2026 / 2028
页数:3
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