Effects of light and X-ray irradiation on CdS-doped glass

被引：17

作者：

Miyoshi, T

Furukawa, H

Nitta, K

Okuni, H

Matsuo, N

机构：

[1] Dept. of Elec. and Electron. Eng., Yamaguchi University, Tokiwadai, Ube

来源：

SOLID STATE COMMUNICATIONS | 1997年 / 104卷 / 08期

关键词：

nanostructures; semiconductors; recombination and trapping; electron paramagnetic resonance; luminescence;

D O I：

10.1016/S0038-1098(97)00394-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photodarkening in semiconductor-doped glass is considered to be due to photoinduced defects. Effects of light and X-ray irradiation on CdS-doped glass have been reported to investigate the nature of photoinduced defects in CdS-doped glass using ESR (electron spin resonance) and luminescence. The photoinduced defects are different from X-ray induced defects and may be located in glass near CdS nanocrystals. (C) 1997 Elsevier Science Ltd.

引用

页码：451 / 454

页数：4

共 15 条

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