Model-based control in rapid thermal processing

被引:38
作者
Balakrishnan, KS
Edgar, TF
机构
[1] AG Associates, San Jose, CA 95134 USA
[2] Univ Texas, Dept Chem Engn, Austin, TX 78712 USA
关键词
rapid thermal processing; temperature control algorithms; model-based controller;
D O I
10.1016/S0040-6090(99)01049-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In single wafer rapid thermal processing (RTP), the process recipe is characterized by high ramp rates and short high temperature holds. Ln this paper, the development of temperature control algorithms for the RTP process is discussed. A model-based controller based on a physically-based macroscopic model developed from first principles is presented. The model-based controller is compared to an empirically determined controller and is shown to perform favorably towards meeting very stringent specifications. (C) 2000 Published by Elsevier Science S.A. All rights reserved.
引用
收藏
页码:322 / 333
页数:12
相关论文
共 29 条
[1]   RAPID THERMAL-PROCESSING UNIFORMITY USING MULTIVARIABLE CONTROL OF A CIRCULARLY SYMMETRICAL-3 ZONE LAMP [J].
APTE, PP ;
SARASWAT, KC .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1992, 5 (03) :180-188
[2]  
ARAL G, 1994, P 2 INT RAP THERM PR, P288
[3]  
BALAKRISHNAN KS, 1994, PROC SPIE, V2336, P70, DOI 10.1117/12.186774
[4]  
BALAKRISHNAN KS, 1998, THESIS U TEXAS AUSTI
[5]  
BALAKRISHNAN KS, 1996, P 4 INT C ADV THERM, P279
[6]  
Bequette BW, 1998, NATO ADV SCI I E-APP, V353, P3
[7]  
BREEDIJK T, 1993, PROCEEDINGS OF THE 1993 AMERICAN CONTROL CONFERENCE, VOLS 1-3, P2980
[8]  
BUTLER S, 1996, CPC V C CAL
[9]   STEADY-STATE THERMAL UNIFORMITY AND GAS-FLOW PATTERNS IN A RAPID THERMAL-PROCESSING CHAMBER [J].
CAMPBELL, SA ;
AHN, KH ;
KNUTSON, KL ;
LIU, BYH ;
LEIGHTON, JD .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1991, 4 (01) :14-20
[10]   MATHEMATICAL-MODELING OF A SINGLE-WAFER RAPID THERMAL REACTOR [J].
CHATTERJEE, S ;
TRACHTENBERG, I ;
EDGAR, TF .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (12) :3682-3689