AlGaN/GaN double heterostructure channel modulation doped field effect transistors (MODFETs)

AlGaN/GaN double heterostructure channel modulation doped field effect-transistors (DHCMODFETs) with a 1.5-1.75 mu m gate length and a 3 mu m channel length exhibiting record transconductances and saturation current levels have been demonstrated. The ma? maximum normalised drain current and transconductance are similar to 1100mA/mm and 270mS/mm, respectively, at room temperature. Near pinch-off, the drain breakdown voltage is similar to 80V. At an elevated temperature of 300 degrees C, the maximum drain source current and extrinsic transconductance of the device are similar to 500mA/mm and 120mS/mm, respectively.