Science and technology of high dielectric constant thin films and materials integration for application to high frequency devices

被引：42

作者：

Auciello, O ^{[1
]}

Saha, S ^{[1
]}

Kaufman, DY ^{[1
]}

Streiffer, SK ^{[1
]}

Fan, W ^{[1
]}

Kabius, B ^{[1
]}

Im, J ^{[1
]}

Baumann, P ^{[1
]}

机构：

[1] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

来源：

JOURNAL OF ELECTROCERAMICS | 2004年 / 12卷 / 1-2期

关键词：

high dielectric constant; thin films; high-frequency devices;

D O I：

10.1023/B:JECR.0000034006.59246.5e

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thin films of Ba1-xSrxTi1+yO3+z (BST), were fabricated using both by RF-magnetron sputtering and MOCVD to demonstrate application to high frequency devices. Precise control of composition and microstructure is critical for the production of (BaxSr1-x) Ti1+yO3+z (BST) dielectric thin films with the large dependence of permittivity on electric field, low losses, and high electrical breakdown fields that are required for successful integration of BST into tunable high frequency devices. Here we review results on composition-microstructure-electrical property relationships of polycrystalline BST films produced by magnetron sputter deposition that are appropriate for microwave devices such as phase shifters. BST films with a multilayer structure were also developed with different Ti-elemental ratio in each layer to minimize losses and leakage current. Interfacial contamination from C and H species was studied and implications on electrical properties are highlighted. Finally, York's group at the University of California-Santa Barbara successfully integrated our BST films onto phase shifter arrays. The results show potential of BST films in such applications. Results from initial work on the integration of Cu-electrodes with BST films are also presented.

引用

页码：119 / 131

页数：13

共 25 条

[1] Conducting barriers for vertical integration of ferroelectric capacitors on Si [J].