High spatial resolution for IR imaging using an IR diode laser

被引：15

作者：

Bailey, JA ^{[1
]}

Dyer, RB ^{[1
]}

Graff, DK ^{[1
]}

Schoonover, JR ^{[1
]}

机构：

[1] Univ Calif Los Alamos Natl Lab, Chem Sci & Technol Div, Los Alamos, NM 87545 USA

来源：

APPLIED SPECTROSCOPY | 2000年 / 54卷 / 02期

关键词：

infrared imaging; microscopy; IR diode laser; diffraction limit;

D O I：

10.1366/0003702001949122

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

By coupling an infrared diode laser to a conventional infrared microscope, one achieves resolution approaching the diffraction limit while enabling rapid data collection. This technique is demonstrated with the use of a layered polymer sample that has been contaminated by migration of a volatile additive from an exogenous source. The distribution of this additive in the layered structure is shown to correlate with specific layers and reveals a concentration gradient suggesting a diffusive mechanism of additive migration parallel to the layered structure.

引用

页码：159 / 163

页数：5

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