Optical data recording with vanadium dioxide-based film reversible media

Thermally induced semiconductor-metal phase transitions taking place in Al/VO2 /insulator and VO2 /insulator film systems upon recording optical data are investigated. Experiments show that the rate of the processes depends on thermophysical parameters of the films, as well as on the energy exposure. The dynamic range of the energy exposure sensitivity is defined by the hysteresis loop width. The shape and width of the hysteresis loop depends on the VO2 film thickness and the nonstoichiometric ratio profile across the film. (C) 2002 MAIK "Nauka / Interperiodica".