Growth of TGS crystals using uniaxially solution-crystallization method of Sankaranarayanan-Ramasamy

被引:27
作者
Balamurugan, N.
Lenin, M.
Bhagavannarayana, G.
Ramasamy, P. [1 ]
机构
[1] Anna Univ, Crystal Growth Ctr, Madras 600025, Tamil Nadu, India
[2] Natl Phys Lab, Mat Characterizat Div, New Delhi 110012, India
[3] SSN, Coll Engn, Kalavakkam, India
关键词
growth from solution; TGS crystal; high-resolution X-ray diffraction; UV-Vis Studies; dielectric properties;
D O I
10.1002/crat.200610788
中图分类号
O7 [晶体学];
学科分类号
0702 [物理学]; 070205 [凝聚态物理]; 0703 [化学]; 080501 [材料物理与化学];
摘要
The recently discovered crystal growth method called uniaxially solution-crystallization method of Sankaranarayanan-Ramasamy (SR) is modified in some aspects and used for growth of triglycine sulphate (TGS) crystals. The modification leads to the simplicity, reduction of cost and avoided the temperature fluctuations. The < 010 > direction of TGS is very important and used for fabrication of infrared detectors. Using this method, the < 001 >, < 010 > directional crystals of TGS were successfully grown in a glass crystallizer. The grown crystal was characterized by HRXRD, UV-Visible and dielectric studies. The results prove the suitability of the modified SR method for oriented TGS crystal. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:151 / 156
页数:6
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