A CTAB-assisted hydrothermal orientation growth of ZnO nanorods

被引:331
作者
Sun, XM [1 ]
Chen, X [1 ]
Deng, ZX [1 ]
Li, YD [1 ]
机构
[1] Tsing Hua Univ, China Minist Educ, Dept Chem, Key Lab Atom & Mol Nanosci, Beijing 100084, Peoples R China
关键词
ZnO; nanorod; surfactant; hydrothermal; erosion;
D O I
10.1016/S0254-0584(02)00310-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
ZnO nanorods are prepared by cetyltrimethylammonium bromide (CTAB) favored hydrothermal oxidization of zinc metal at 180degreesC. The samples are characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Results show that CTAB played a significant role in the formation of ZnO rods. The presence of CTAB can greatly favor the erosion process and lead to the orientation growth of ZnO nanorods. Possible mechanisms for the CTAB assisted orientation growth of ZnO nanorods are discussed. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:99 / 104
页数:6
相关论文
共 27 条
[1]   High temperature excitonic stimulated emission from ZnO epitaxial layers [J].
Bagnall, DM ;
Chen, YF ;
Zhu, Z ;
Yao, T ;
Shen, MY ;
Goto, T .
APPLIED PHYSICS LETTERS, 1998, 73 (08) :1038-1040
[2]   Optically pumped lasing of ZnO at room temperature [J].
Bagnall, DM ;
Chen, YF ;
Zhu, Z ;
Yao, T ;
Koyama, S ;
Shen, MY ;
Goto, T .
APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232
[3]   A new 3D organization of mesopores in oriented CTAB silica films [J].
Besson, S ;
Ricolleau, C ;
Gacoin, T ;
Jacquiod, C ;
Boilot, JP .
JOURNAL OF PHYSICAL CHEMISTRY B, 2000, 104 (51) :12095-12097
[4]   OPTICAL AND ELECTRICAL-PROPERTIES OF RADICAL BEAM GETTERING EPITAXY GROWN N-TYPE AND P-TYPE ZNO SINGLE-CRYSTALS [J].
BUTKHUZI, TV ;
BUREYEV, AV ;
GEORGOBIANI, AN ;
KEKELIDZE, NP ;
KHULORDAVA, TG .
JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) :366-369
[5]   Dilute solution routes to various controllable morphologies of MCM-41 silica with a basic medium [J].
Cai, Q ;
Luo, ZS ;
Pang, WQ ;
Fan, YW ;
Chen, XH ;
Cui, FZ .
CHEMISTRY OF MATERIALS, 2001, 13 (02) :258-263
[6]   Highly oriented 3D-hexagonal silica thin films produced with cetyltrimethylammonium bromide [J].
Grosso, D ;
Balkenende, AR ;
Albouy, PA ;
Lavergne, M ;
Mazerolles, L ;
Babonneau, F .
JOURNAL OF MATERIALS CHEMISTRY, 2000, 10 (09) :2085-2089
[7]  
Hendrikse KG, 2000, J APPL POLYM SCI, V78, P2302, DOI 10.1002/1097-4628(20001220)78:13<2302::AID-APP70>3.0.CO
[8]  
2-B
[9]  
Hendrikse KG, 2000, J APPL POLYM SCI, V78, P2290, DOI 10.1002/1097-4628(20001220)78:13<2290::AID-APP60>3.0.CO
[10]  
2-P