Temperature-dependent gate effect of sintered HgTe nanoparticles

In this study, the electronic properties of sintered HgTe nanoparticles are characterized to determine the type of charge carrier within them, and to investigate their gate effects as a function of temperature. HgTe nanoparticles synthesized by the colloidal method were first deposited on thermally oxidized Si substrates by spin-coating, and then sintered at 150 degrees C. The sintered nanoparticles were determined to be p-type by analyzing the drain current and drain-source voltage (Id-Vds) relationship as a function of the gate voltage (V-g). The field-effect mobilities of the holes in the sintered HgTe nanoparticles are estimated to be 0.041, 0.036, and 0.022cm(2)/(V.s) at 60, 180, and 300K, respectively. The variation in the slope of the Id-Vds Curve as a function of V. becomes more distinctive as temperature decreases. At temperatures lower than 140 K, an inversion mode was observed for the channel of the sintered nanoparticles.