High-power Nd:GdVO4 laser at 1.34 μm end-pumped by laser-diode-array

被引：31

作者：

Du, CL ^{[1
]}

Qin, LJ ^{[1
]}

Meng, XL ^{[1
]}

Xu, GB ^{[1
]}

Wang, ZP ^{[1
]}

Xu, XG ^{[1
]}

Zhu, L ^{[1
]}

Xu, BC ^{[1
]}

Shao, ZS ^{[1
]}

机构：

[1] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

来源：

OPTICS COMMUNICATIONS | 2002年 / 212卷 / 1-3期

关键词：

Nd : GdVO4; 1.34 mu m; diode-end-pumped; gadolinium vanadate;

D O I：

10.1016/S0030-4018(02)01978-8

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A diode-end-pumped high-power Nd:GdVO4 laser operating at 1.34 mum has been demonstrated. The maximum continuous-wave output power of 4.62 W was obtained at the incident pump power of 14.75 W, with the corresponding optical conversion efficiency of 31.3% and the average slope efficiency of 33.1%. By using the experimentally measured threshold pump power and slope efficiency, the stimulated emission cross-section of Nd:GdVO4 crystal at 1.34 mum was determined to be 1.78 x 10(-19) cm(2). (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：177 / 181

页数：5

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