Epitaxial growth of dielectric CaCu3Ti4O12 thin films on (001) LaAlO3 by pulsed laser deposition

High dielectric CaCu3Ti4O12 (CCTO) thin films were epitaxially grown on (001) LaAlO3 (LAO) substrates by pulsed laser deposition. Microstructural studies by x-ray diffraction, pole figure measurements, and transmission electron microscopy show that the as-grown films are good single crystalline quality with an interface relationship of (001)(CCTO)//(001)(LAO) and [100](CCTO)//[100](LAO). Dielectric property measurements show that the films have an extremely high dielectric constant with value of 10 000 at 1 MHz at room temperature. It is interesting to note that the twinned substrate results in the formation of twinning or dislocations inside the CCTO film. (C) 2002 American Institute of Physics.