Enhanced hole injection in a polymer light emitting diode using a small molecule monolayer bound to the anode

被引：26

作者：

Guo, Jing

Koch, Norbert

Bernasek, Steven L.

Schwartz, Jeffrey

机构：

[1] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA

[2] Humboldt Univ, Inst Phys, D-12489 Berlin, Germany

来源：

CHEMICAL PHYSICS LETTERS | 2006年 / 426卷 / 4-6期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/j.cplett.2006.05.129

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A monolayer of quarterthiophene-2-phosphonate (4TP) was chemically bound to the surface of indium tin oxide (ITO) and was then p-doped with the strong acceptor, tetrafluorotetracyanoquinodimethane (F-4-TCNQ). This interface modification strongly reduced the barrier for hole injection compared to unmodified ITO. This doped monolayer surface treatment was also superior to the commonly used anode coating poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PPS) at driving voltages above 5.2 V. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：370 / 373

页数：4

共 20 条

[1]

Bernius MT, 2000, ADV MATER, V12, P1737, DOI 10.1002/1521-4095(200012)12:23<1737::AID-ADMA1737>3.0.CO

[2]

2-N

[3] Role of electron injection in polyfluorene-based light emitting diodes containing PEDOT:PSS -: art. no. 205209 [J].