Influence of measuring environment on the electrical characteristics of pentacene-based thin film transistors

被引：39

作者：

Wang, YW

Cheng, HL

Wang, YK

Hu, TH

Ho, JC

Lee, CC

Lei, TF

Yeh, CF

机构：

[1] Elect Res & Serv Org, Ind Technol Res Inst, Hsinchu 310, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 310, Taiwan

来源：

THIN SOLID FILMS | 2004年 / 467卷 / 1-2期

关键词：

organic semiconductors; electronic devices; electrical properties and measurements;

D O I：

10.1016/j.tsf.2004.04.001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work concerns the electrical properties and carrier transport behavior of polycrystalline pentacene-based thin film transistors (TFTs) in air and high-vacuum environments. The transistor in a high vacuum outperforms that in air. The dependence of the field-effect mobility on the gate voltage and the drain voltage is considered. A potential barrier model is applied to estimate the trap density of the pentacene transistor. The determined trap density at the grain boundaries of the pentacene film in air exceeds that in a high vacuum. These results show that the increased trap concentration at the grain boundaries in ambient air limits carrier transport. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：215 / 219

页数：5

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