Thermal and mechanical cracking in bis(triisopropylsilyiethnyl) pentacene thin films

被引:61
作者
Chen, Jihua
Tee, Chee Keong
Yang, Junyan
Shaw, Charles
Shtein, Max
Anthony, John
Martin, David C. [1 ]
机构
[1] Univ Michigan, Macromol Sci & Engn Ctr, Ann Arbor, MI 48109 USA
[2] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
[3] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
[4] Univ Michigan, Dept Biomed Engn, Ann Arbor, MI 48109 USA
[5] Univ Kentucky, Dept Chem, Lexington, KY 40506 USA
关键词
annealing; charge transport; functionalized pentacene; organic semiconductors; organic thin-film transistors; structure-property relations; surface energy;
D O I
10.1002/polb.21007
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Bis(triisopropylsilylethnyl) pentacene (TIPS pentacene) was synthesized to increase its solubility in common liquid solvents and, at the same time, enhance the pi-pi stacking between neighboring acenes in the crystallized state in comparison with unmodified pentacene. Hot-stage microscopy experiments revealed that during heating voids develop along the long axis of the TIPS pentacene films {along the [210] direction/parallel to the (126) planes and crystals overlap along the short axis {along the [120] direction/parallel to the (210) planes}. From molecular mechanics simulations, the predominant twin boundaries of (120) and commonly observed cracking planes of (120), (120), and (210) had relatively low surface energies in comparison with planes with similar Miller indices. Organic thin-film transistors with TIPS pentacene as the active layer were fabricated, and the mobility values decreased from 0.4-1.0 cm(2)/V s before cracking to similar to 0.2 cm(2)/N s after cracking. To maintain the high charge carrier mobility of TIPS pentacene devices, these cracks should be avoided. (c) 2006 Wiley Periodicals, Inc.
引用
收藏
页码:3631 / 3641
页数:11
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