The direct nano-patterning of ZnO using nanoimprint lithography with ZnO-sol and thermal annealing

被引:52
作者
Yang, Ki-Yeon [1 ]
Yoon, Kyung-Min [1 ]
Choi, Kyung-Woo [2 ]
Lee, Heon [1 ]
机构
[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea
[2] Korea Inst Nucl Safety, Taejon 305338, South Korea
关键词
ZnO nano-pattern; ZnO-sol; ZnO-gel; Nanoimprint lithography;
D O I
10.1016/j.mee.2009.03.078
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Nano-patterned ZnO layer was fabricated by ZnO-sol imprinting with a polymeric mold, followed by annealing. instead of polymer based imprint resin, ZnO-sol was used as an imprint resin. During the imprinting process, the organic solvent in the ZnO-sol was absorbed into a polymeric mold and thus, ZnO-sol was converted to ZnO-gel. These patterns were subsequently annealed at 650 degrees C for 1 h in atmospheric ambient to form ZnO patterns. X-ray diffraction (XRD) and photoluminescence (PL) confirmed that ZnO-gel was completely converted into ZnO by annealing. Using this ZnO-sol imprinting method, ZnO nano-patterns, as small as 50 nm. were fabricated on Si and oxidized Si wafer substrates. The ZnO nano-patterns were characterized using scanning electron microscopy (SEM) and Transmission electron microscopy (TEM). (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:2228 / 2231
页数:4
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