Effects of the narrow band gap on the properties of InN

被引：397

作者：

Wu, J ^{[1
]}

Walukiewicz, W

Shan, W

Yu, KM

Ager, JW

Haller, EE

Lu, H

Schaff, WJ

机构：

[1] Univ Calif Berkeley, Appl Sci & Technol Grad Grp, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Sci Mat, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[4] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.66.201403

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Infrared reflection experiments were performed on wurtzite InN films with a range of free-electron concentrations grown by molecular-beam epitaxy. Measurements of the plasma edge frequencies were used to determine electron effective masses. The results show a pronounced increase in the electron effective mass with increasing electron concentration, indicating a nonparabolic conduction band in InN. We have also found a large Burstein-Moss shift of the fundamental band gap. The observed effects are quantitatively described by the k.p interaction within the two-band Kane model of narrow-gap semiconductors.

引用

页数：4

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