A new concept for using ferroelectric transistors in nonvolatile memories

被引：4

作者：

Fitsilis, M ^{[1
]}

Kohlstedt, H ^{[1
]}

Waser, R ^{[1
]}

Ullmann, M ^{[1
]}

机构：

[1] Res Ctr Julich, D-52425 Julich, Germany

来源：

INTEGRATED FERROELECTRICS | 2004年 / 60卷

关键词：

ferroelectric field effect transistor; FeFET; MFIS; BSIM3v3; non-volatile memory; non-destructive readout;

D O I：

10.1080/10584580490441197

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new concept for using a ferroelectric field effect transistor in a memory configuration is presented without the requirement of a negative voltage or an erase operation. The transistor is designed so that the accumulation sets in at a lower gate source voltage making it possible to reverse the polarization without applying a negative pulse to the gate.

引用

页码：45 / 58

页数：14

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