Miniaturized diamond field-effect transistors for application in biosensors in electrolyte solution

被引：30

作者：

Song, Kwang-Soup

Hiraki, Takahiro

Umezawa, Hitoshi

Kawarada, Hiroshi

机构：

[1] Waseda Univ, Sch Sci & Engn, Dept Elect Engn & Biosci, Shinjuku Ku, Tokyo 1698555, Japan

[2] Waseda Univ, Consolidated Res Inst Adv Sci & Med Care, Shinjuku Ku, Tokyo 1620041, Japan

[3] Natl Inst Adv Ind Sci & Technol, Diamond Res Ctr, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 06期

关键词：

D O I：

10.1063/1.2454390

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors fabricated diamond solution-gate field-effect transistors (SGFETs) with miniaturization of the channel length to 5 mu m by photolithography. The channel surface was directly functionalized with amine by ultraviolet irradiation in an ammonia gas for 4 h and aminated diamond SGFETs were sensitive to pH by 40 mV/pH. Urease was immobilized on the amine-modified channel surface, which was sensitive to urea by 27 mu A/decade from 10(-5)M to 10(-2)M. The authors fabricated submicron-sized (500 nm) diamond SGFETs using electron-beam lithography. The transconductance (g(m)) was 56 mS/mm, which was 930-fold greater than that of the 500 mu m channel length. (c) 2007 American Institute of Physics.

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页数：3

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