Room temperature ferromagnetism in co-doped CeO2 films on Si(001)

被引：64

作者：

Fernandes, V. ^{[1
]}

Klein, J. J.

Mattoso, N.

Mosca, D. H.

Silveira, E.

Ribeiro, E.

Schreiner, W. H.

Varalda, J.

de Oliveira, A. J. A.

机构：

[1] Univ Fed Parana, PIPE, Lab Nanoestructuras Sensores, BR-81531990 Curitiba, Parana, Brazil

[2] Univ Fed Parana, Dept Fis, BR-81531990 Curitiba, Parana, Brazil

[3] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP, Brazil

来源：

PHYSICAL REVIEW B | 2007年 / 75卷 / 12期

基金：

巴西圣保罗研究基金会;

关键词：

D O I：

10.1103/PhysRevB.75.121304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the room temperature ferromagnetism of nanocrystalline Co-doped CeO2 films electrodeposited onto Si(001) substrates. The nanocrystalline CeO2 films, containing from 0.5 to 13.2 at. % Co, present oxygen-vacancy formation with a considerable inclusion of Co into the lattice without evidence of metallic Co clusters or secondary phase formation. We correlate the robust ferromagnetism of this multifunctional magnetic oxide integrated on Si with two exchange mechanisms mediated by intrinsic defect centers observed in the emerging ferromagnetic insulators.

引用

页数：4

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