Equilibrium carrier mobility in disordered organic semiconductors

被引:30
作者
Arkhipov, VI
Emelianova, EV
Adriaenssens, GJ
Bässler, H
机构
[1] Univ Marburg, IPNMC, D-35032 Marburg, Germany
[2] Univ Leuven, SPL, B-3001 Heverlee, Belgium
关键词
D O I
10.1016/S0022-3093(01)01071-7
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The equilibrium carrier mobility in an energetically disordered and positionally random hopping system is analytically calculated by direct averaging of carrier hopping rates and by the use of the effective transport energy concept. In good quantitative agreement A with experimental data and results of Monte-Carlo simulation, the temperature and concentration dependencies of the mobility can be almost perfectly factorized. i.e., represented as a product of two functions one of which depends solely upon the temperature while another one governs the dependence on the density of localized states. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1047 / 1051
页数:5
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