Far-infrared stimulated emission in p-Ge under high uniaxial pressure

被引：15

作者：

Altukhov, IV ^{[1
]}

Chirkova, EG ^{[1
]}

Kagan, MS ^{[1
]}

Korolev, KA ^{[1
]}

Sinis, VP ^{[1
]}

Yassievich, IN ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG,RUSSIA

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1996年 / 198卷 / 01期

关键词：

D O I：

10.1002/pssb.2221980105

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Stimulated emission of far-infrared radiation from uniaxially compressed p-Ge in strong electric fields is shown to be due to population inversion of strain-split acceptor levels. A peak corresponding to the optical transitions between split-off and ground acceptor states is found in the spectrum of stimulated emission. A strong frequency tuning by stress due to the pressure dependence of the energy splitting of these states is obtained. The inversion takes piece as the split-off acceptor state is in the valence band continuum.

引用

页码：35 / 40

页数：6

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