Infrared-optical properties of undoped and gallium doped ZnO

被引：15

作者：

Goppert, M

Gehbauer, F

Hetterich, M

Munzel, J

Queck, D

Klingshirn, C

机构：

[1] Institut für Angewandte Physik, Universität Karlsruhe

来源：

JOURNAL OF LUMINESCENCE | 1997年 / 72-4卷

关键词：

plasmon-phonon coupling; ZnO:Ga; infrared spectroscopy;

D O I：

10.1016/S0022-2313(96)00236-0

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Reflection and transmission spectra were recorded for various temperature for two different polarizations from 5 to 600 meV. We studied the plasmon-phonon coupling in ZnO : Ga single crystals, for foe carrier concentrations of up to 1.8 x 10(20) cm(-3) Our data show that the position of the plasma edge in the reflectivity spectra is highly sensitive to the method of preparation of the ZnO surfaces.

引用

页码：430 / 431

页数：2