Bulk-quantity synthesis and electrical properties of SnO2 nanowires prepared by pulsed delivery

被引：8

作者：

Chen, Z. W. ^{[1
,2
]}

Jiao, Z. ^{[2
]}

Wu, M. H. ^{[2
]}

Shek, C. H. ^{[1
]}

Wu, C. M. L. ^{[1
]}

Lai, J. K. L. ^{[1
]}

机构：

[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon Tong, Hong Kong, Peoples R China

[2] Shanghai Univ, Shanghai Appl Radiat Inst, Inst Nanochem & Nanobiol, Sch Environm & Chem Engn, Shanghai 200444, Peoples R China

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2009年 / 115卷 / 2-3期

基金：

中国国家自然科学基金;

关键词：

Nanostructures; Semiconductors; Electron microscopy; Electrical properties; TIN OXIDE NANOWIRES; GROWTH; TEMPERATURE; NANORIBBONS; SUPERLATTICES; NANOCRYSTALS; TRANSPORT; NANOTUBES; NANORODS;

D O I：

10.1016/j.matchemphys.2009.01.032

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tin dioxide nanowires have been realized via pulsed laser deposition techniques based on a sintered cassiterite SnO2 target, being deposited on Si (100) substrates at room temperature. X-ray diffraction indicated that the nanowires show the tetragonal rutile structure in the form of SnO2. Transmission electron microscopy revealed that the nanowires are structurally perfect and uniform, and diameters range from 10 nm to 30 nm, and lengths of several hundreds nanometers to a few micrometers. Selected area electron diffraction and high-resolution transmission electron microscopy verified that the nanowires grow along the [110] growth direction. Electric properties were investigated by connecting a single SnO2 nanowire in field-effect transistor configuration. The SnO2 nanowires based on field-effect transistor devices exhibited that the SnO2 nanowires prepared by our method hold better electrical properties. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：660 / 663

页数：4

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