Second harmonic generation in hydrogenated amorphous silicon

被引：16

作者：

Alexandrova, S

Danesh, P

Maslyanitsyn, IA

机构：

[1] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria

[2] Russian Acad Sci, Inst Gen Phys, Moscow 117942, Russia

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.61.11136

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The first application of the second harmonic generation (SHG) technique to investigate the structure of a-Si:H films is reported. Dependence of SHG on the type of substrate material and the temperature during deposition has been observed. The origin of SHG is discussed. A stress model is proposed to explain the experimental results. It is suggested that the second harmonic is generated in a strained layer close to the substrate.

引用

收藏

页码：11136 / 11138

页数：3

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