Structural, optical, and electrical properties of tin sulfide thin films grown by spray pyrolysis

被引：104

作者：

Calixto-Rodriguez, M. ^{[1
]}

Martinez, H. ^{[1
]}

Sanchez-Juarez, A. ^{[2
]}

Campos-Alvarez, J. ^{[2
]}

Tiburcio-Silver, A. ^{[3
]}

Calixto, M. E.

机构：

[1] Univ Nacl Autonoma Mexico, Inst Ciencias Fis, Cuernavaca 62210, Morelos, Mexico

[2] Univ Nacl Autonoma Mexico, Ctr Invest Energia, Cuernavaca 62580, Morelos, Mexico

[3] Inst Tecnol Toluca SEP, Metepec 52176 3, Estado Mexico, Mexico

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 07期

关键词：

Tin sulfide; Spray pyrolysis; Thin films; DEPOSITION; SNS; TEMPERATURE;

D O I：

10.1016/j.tsf.2008.11.026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tin sulfide (SnS) thin films have been prepared by spray pyrolysis (SP) technique using tin chloride and N, N-dimethylthiourea as precursor compounds. Thin films prepared at different temperatures have been characterized using several techniques. X-ray diffraction studies have shown that substrate temperature (T,) affects the crystalline structure of the deposited material as well as the optoelectronic properties. The calculated optical band gap (E-g) value for films deposited at T-s=320-396 degrees C was 1.70 eV (SnS). Additional phases of SnS2 at 455 degrees C and SnO2 at 488 degrees C were formed. The measured electrical resistivity value for SnS films was similar to 1 x 10(4) Omega-cm. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2497 / 2499

页数：3

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