Crystal growth of column-III nitride semiconductors and their electrical and optical properties

被引：16

作者：

Akasaki, I

Amano, H

机构：

[1] Meijo University, Dept. of Elec. and Electron. Eng., Nagoya 468, 1-501 Shiogamaguchi, Tempaku-ku

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 163卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(95)01040-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Column-III nitrides belong to the most promising materials for application to high-temperature electronic devices as well as short wavelength light emitters. The recent development of the technology and understanding of the growth mode in heteroepitaxial growth of nitrides on highly mismatched substrates enable us to grow high-quality nitride films. Conductivity control of both n-type and p-type nitrides has also been achieved. This paper reviews the recent progress of the crystal growth of column-III nitrides. Electrical and optical properties of these nitrides will be discussed.

引用

页码：86 / 92

页数：7

共 34 条

[1] EFFECTS OF AIN BUFFER LAYER ON CRYSTALLOGRAPHIC STRUCTURE AND ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAN AND GA1-XALXN(0-LESS-THAN-X-LESS-THAN-OR-EQUAL-TO-0.4) FILMS GROWN ON SAPPHIRE SUBSTRATE BY MOVPE [J].