Defect chemistry modeling of high-temperature proton-conducting cerates

被引:76
作者
Song, SJ
Wachsman, ED [1 ]
Dorris, SE
Balachandran, U
机构
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[2] Argonne Natl Lab, Energy Technol Div, Argonne, IL 60439 USA
关键词
high-temperature proton conductors; defect modeling; mixed protonic-electronic conductor;
D O I
10.1016/S0167-2738(02)00147-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The appropriate equations governing proton incorporation into perovskite oxides with an emphasis on high-temperature proton conductors (HTPCs) are reviewed. The prototypical compound SrCe0.95Y0.05O3 - delta is considered in detail. The mathematical approach of Poulsen is applied and the defect concentrations are modeled with a C language routine. A cluster-defect model is not considered here. Defect concentrations are calculated as a function of water vapor pressure and oxygen partial pressure. The solutions are presented in the form of two- and three-dimensional graphs of defect concentrations versus water vapor and oxygen partial pressures. Their physical meanings are explained by pertinent proton incorporation equations. Effects of water vapor pressure and A/B ratio on the n-p transition point are simulated. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1 / 10
页数:10
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