Ti-gate metal induced PHEMT degradation in hydrogen

被引：23

作者：

Chao, PC

Hu, W

DeOrio, H

Swanson, AW

Hoffmann, W

Taft, W

机构：

[1] LOCKHEED MARTIN CO,ELECT LAB,SYRACUSE,NY 13020

[2] LOCKHEED MARTIN CO,ASTRO SPACE DIV,VALLEY FORGE,PA 19406

来源：

IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 09期

关键词：

hydrogen effect; PHEMT;

D O I：

10.1109/55.622523

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Through accelerated life test in hydrogen, we have found, for the first time, that in addition to Pt metal, Ti metal in a Ti/Pt/Au-gate PHEMT can also induce a significant hydrogen effect [1] by reacting with a small amount of hydrogen gas in the ambient, The hydrogen sensitivity of a PHEMT device caused by Ti gate metal is significantly less than that due to Pt. Since Ti is not a hydrogen catalyst, the resulting hydrogen sensitivity indicates that a catalytic reaction between the gate metal and hydrogen gas is not required to have a detrimental hydrogen effect, The data also show that the degradation evident in the PHEMT devices due to the Ti-H-2 interaction is similar to that from the Pt-H-2 interaction, It is clear from this work that attempting to solve the hydrogen degradation problem by eliminating the Pt gate metal in a PHEMT is ineffective.

引用

页码：441 / 443

页数：3

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