Quantum kinetics regime during and immediately after laser excitation of semiconductors

被引：10

作者：

BarAd, S

Chemla, DS

机构：

[1] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 48卷 / 1-2期

基金：

美国国家科学基金会;

关键词：

semiconductors; quantum kinetics; thermalization; short pulse spectroscopy;

D O I：

10.1016/S0921-5107(97)00085-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated carrier dynamics in the semiconductor GaAs, during and just after creation by approximate to 30 fs laser pulses, much shorter than the phonon and plasma time scales. We observed a quasi-instantaneous spread of the carrier population in momentum-energy space, that is not even qualitatively consistent with Boltzmann kinetics. The observations are, however, in qualitative agreement with quantum kinetic theories of carrier-carrier and carrier-phonon scattering. (C) 1997 Elsevier Science S.A.

引用

收藏

页码：83 / 87

页数：5

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