Robustness Analysis and Experimental Validation of a Fault Detection and Isolation Method for the Modular Multilevel Converter

被引:189
作者
Shao, Shuai [1 ]
Watson, Alan J. [1 ]
Clare, Jon C. [1 ]
Wheeler, Pat W. [1 ]
机构
[1] Univ Nottingham, Sch Elect & Elect Engn, Power Elect Machines & Control Grp, Nottingham NG7 2RD, England
关键词
Fault detection and isolation (FDI); modular multilevel converter (MMC); sliding-mode observer (SMO); RELIABILITY; PROTECTION; DIAGNOSIS; TOLERANCE; DRIVE;
D O I
10.1109/TPEL.2015.2462717
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
080906 [电磁信息功能材料与结构]; 082806 [农业信息与电气工程];
摘要
This paper presents a fault detection and isolation (FDI) method for open-circuit faults of power semiconductor devices in a modular multilevel converter (MMC). The proposed FDI method is simple with only one sliding-mode observer (SMO) equation and requires no additional transducers. The method is based on an SMO for the circulating current in an MMC. An open-circuit fault of power semiconductor device is detected when the observed circulating current diverges from the measured one. A fault is located by employing an assumption-verification process. To improve the robustness of the proposed FDI method, a new technique based on the observer injection term is introduced to estimate the value of the uncertainties and disturbances; this estimated value can be used to compensate the uncertainties and disturbances. As a result, the proposed FDI scheme can detect and locate an open-circuit fault in a power semiconductor device while ignoring parameter uncertainties, measurement error, and other bounded disturbances. The FDI scheme has been implemented in a field-programmable gate array using fixed-point arithmetic and tested on a single-phase MMC prototype. Experimental results under different load conditions show that an open-circuit faulty power semiconductor device in an MMC can be detected and located in less than 50 ms.
引用
收藏
页码:3794 / 3805
页数:12
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