Dielectric characterization of sol-gel derived Sn doped ZrTiO4 thin films

被引：10

作者：

Alexander, TP ^{[1
]}

Uhlmann, DR ^{[1
]}

Teowee, G ^{[1
]}

McCarthy, K ^{[1
]}

McCarthy, F ^{[1
]}

Bukowski, TJ ^{[1
]}

机构：

[1] DONNELLY CORP,TUCSON,AZ 85712

来源：

INTEGRATED FERROELECTRICS | 1997年 / 17卷 / 1-4期

关键词：

ZrTiO4 thin films; sol-gel; dielectric constant; dissipation factor;

D O I：

10.1080/10584589708012997

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-quality thin film dielectric materials are critical for the next generation of integrated microwave devices. Much recent attention has been focused on ZrTiO4 and Sn doped ZrTiO4 films for applications in these devices. Sol-gel derived Sn doped ZrTiO4 thin films were prepared on Si and platinized Si wafers and fired to temperatures ranging from 550 degrees C to 700 degrees C. Multiple spincoating was performed to obtain films up to 0.5 mu m thick, with intermediate firings at 400 degrees C between coatings. The ZrTiO4 films exhibited a dielectric constant of about 32 with low leakage currents of 2 x 10(-9) A. These films were crystalline when fired to 700 degrees C or above. The addition of Sn lowered the dielectric constant but also improved the dissipation factor.

引用

页码：221 / 230

页数：10

共 18 条

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