Reaction steps of silicidation in ZrO2/SiO2/Si layered structure

被引：46

作者：

Muraoka, K ^{[1
]}

机构：

[1] Toshiba Co Ltd, Adv LSI Technol Lab, Isogo Ku, Kanagawa 2358522, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 24期

关键词：

D O I：

10.1063/1.1486046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reaction steps of silicidation in ZrO2/SiO2/Si layered structure have been investigated in terms of ultrahigh vacuum annealing. Comparison of 2- and 20-nm ZrO2 films at 920 degreesC revealed that the trigger of silicidation is the contact of ZrO2, SiO, and Si accompanying disappearance of interfacial SiO2 layer due to SiO desorption. In the contact position, a small amount of SiO gas can easily change ZrO2 to ZrSi2. Moreover, this reaction model is also applicable to the silicidation of gate polycrystalline-Si (poly-Si)/ZrO2 interface. (C) 2002 American Institute of Physics.

引用

页码：4516 / 4518

页数：3

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