Epitaxial growth of full-Heusler alloy Co2MnSi thin films on MgO-buffered MgO substrates

被引：21

作者：

Kijima, H. ^{[1
]}

Ishikawa, T. ^{[1
]}

Marukame, T. ^{[1
]}

Koyama, H. ^{[1
]}

Matsuda, K. ^{[1
]}

Uemura, T. ^{[1
]}

Yamamoto, M. ^{[1
]}

机构：

[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Div Elect Informat, Sapporo, Hokkaido 0600814, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2006年 / 42卷 / 10期

关键词：

Co-based full-Heusler alloy; Co2MnSi; epitaxial growth; half-metallic; MgO;

D O I：

10.1109/TMAG.2006.878850

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

Full-Heusler alloy Co2MnSi (CMS) thin films were epitaxially grown on MgO-buffered MgO substrates through magnetron sputtering. The films were deposited at room temperature and subsequently annealed in situ at 600 degrees C. X-ray pole figure measurements of the annealed films showed 111 peaks with fourfold symmetry, providing direct evidence that these films were epitaxial and crystallized in the L2(1) structure. The annealed films had sufficiently flat surface morphologies with root-mean-square roughness of about 0.22 nm at a film thickness of 50 nm. The saturation magnetization of the annealed films was 4.5 mu(B)/f.u. at 10 K, corresponding to about 90 % of the Slater-Pauling value for CMS.

引用

页码：2688 / 2690

页数：3

共 13 条

[1]

Epitaxial growth and magnetic properties of single-crystal Co2MnGe Heusler alloy films on GaAs (001) [J].