Gallium nitride quantum dots in a silica xerogel matrix

被引：10

作者：

Murali, AK ^{[1
]}

Leppert, VJ ^{[1
]}

Risbud, SH ^{[1
]}

机构：

[1] Univ Calif Davis, Dept Chem Engn & Mat Sci, Davis, CA 95616 USA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 76卷 / 03期

基金：

美国国家科学基金会;

关键词：

oxidation; microstructure; xerogel;

D O I：

10.1016/S0921-5107(00)00452-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Controlled oxidation of GaN powders was performed inside xerogel cavities with the objective of demonstrating formation of composites of GaN nanoparticles embedded in a silicate matrix. A 60% reduction in GaN particle size was observed due to the oxidation of bulk particles dispersed inside the xerogel. The microstructure and phase chemistry of the nano-GaN in xerogel composite were characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：206 / 210

页数：5

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