Manipulating exciton fine structure in quantum dots with a lateral electric field

被引：171

作者：

Gerardot, B. D. ^{[1
]}

Seidl, S.

Dalgarno, P. A.

Warburton, R. J.

Granados, D.

Garcia, J. M.

Kowalik, K.

Krebs, O.

Karrai, K.

Badolato, A.

Petroff, P. M.

机构：

[1] Heriot Watt Univ, Sch Engn & Phys Sci, Edinburgh EH14 4AS, Midlothian, Scotland

[2] CSIC, CNM, Inst Microelect Madrid, PTM, Madrid 28760, Spain

[3] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

[4] LMU, Ctr NanoSci, D-80539 Munich, Germany

[5] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 04期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2431758

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fine structure of the neutral exciton in a single self-assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. The authors show that the lateral electric field strongly affects the exciton fine-structure splitting due to active manipulation of the single particle wave functions. Remarkably, the splitting can be tuned over large values and through zero. (c) 2007 American Institute of Physics.

引用

页数：3

共 20 条

[1] Entangled photon pairs from semiconductor quantum dots [J].

Akopian, N ;

Lindner, NH ;

Poem, E ;

Berlatzky, Y ;

Avron, J ;

Gershoni, D ;

Gerardot, BD ;

Petroff, PM .

PHYSICAL REVIEW LETTERS, 2006, 96 (13)

[2] Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots -: art. no. 195315 [J].

Bayer, M ;

Ortner, G ;

Stern, O ;

Kuther, A ;

Gorbunov, AA ;

Forchel, A ;

Hawrylak, P ;

Fafard, S ;

Hinzer, K ;

Reinecke, TL ;

Walck, SN ;

Reithmaier, JP ;

Klopf, F ;

Schäfer, F .

PHYSICAL REVIEW B, 2002, 65 (19) :1953151-19531523

[3] Regulated and entangled photons from a single quantum dot [J].

Benson, O ;

Santori, C ;

Pelton, M ;

Yamamoto, Y .

PHYSICAL REVIEW LETTERS, 2000, 84 (11) :2513-2516

[4]

BOUWMEESTER D, 2000, PHYS QUANTUM INFORMA

[5] Lateral electric-field effects on excitonic photoemissions in InGaAs quantum disks [J].

Gotoh, H ;

Kamada, H ;

Ando, H ;

Temmyo, J .

APPLIED PHYSICS LETTERS, 2000, 76 (07) :867-869

[6] Electric-field effects on excitons in quantum dots [J].

Heller, W ;

Bockelmann, U ;

Abstreiter, G .

PHYSICAL REVIEW B, 1998, 57 (11) :6270-6273

[7] Voltage-controlled optics of a quantum dot -: art. no. 217401 [J].

Högele, A ;

Seidl, S ;

Kroner, M ;

Karrai, K ;

Warburton, RJ ;

Gerardot, BD ;

Petroff, PM .

PHYSICAL REVIEW LETTERS, 2004, 93 (21)

[8] Influence of an in-plane electric field on exciton fine structure in InAs-GaAs self-assembled quantum dots -: art. no. 041907 [J].

Kowalik, K ;

Krebs, O ;

Lemaître, A ;

Laurent, S ;

Senellart, P ;

Voisin, P ;

Gaj, JA .

APPLIED PHYSICS LETTERS, 2005, 86 (04) :041907-1

[9] Control of fine-structure splitting and biexciton binding in InxGa1-xAs quantum dots by annealing -: art. no. 161301 [J].

Langbein, W ;

Borri, P ;

Woggon, U ;

Stavarache, V ;

Reuter, D ;

Wieck, AD .

PHYSICAL REVIEW B, 2004, 69 (16) :161301-1

[10] Zero-dimensional excitons in CdTe/ZnTe nanostructures [J].

Marsal, L ;

Besombes, L ;

Tinjod, F ;

Kheng, K ;

Wasiela, A ;

Gilles, B ;

Rouvière, JL ;

Mariette, H .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (08) :4936-4943

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