UV random lasing action in p-SiC(4H)/i-ZnO-SiO2 nanocomposite/n-ZnO:Al heterojunction diodes

被引：105

作者：

Leong, Eunice S. P. ^{[1
]}

Yu, Siu Fung ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

ADVANCED MATERIALS | 2006年 / 18卷 / 13期

关键词：

D O I：

10.1002/adma.200502761

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

UV random lasing in p-i-n ZnO-based heterojunction diodes is achieved. The UV emission originates from the use of an intrinsic ZnO-SiO2 nanocomposite layer; the use of ZnO powders can improve the electrical-to-optical conversion efficiency of the heterojunction. The patterned ZnO clusters in the SiO2 matrix enhance the quality of the random media (see figure) thus sustaining the random lasing action. If low-index, p-doped, wide-bandgap materials are used as the hole-injection layer, strong coherent random lasing could be achieved.

引用

页码：1685 / +

页数：5

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