Competition between shallow-impurity and T-shaped quantum-wire states

被引:20
作者
Degani, MH [1 ]
机构
[1] Haras Degani, BR-13250000 Itatiba, SP, Brazil
来源
PHYSICAL REVIEW B | 2002年 / 66卷 / 23期
关键词
D O I
10.1103/PhysRevB.66.233306
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The binding energy of an electron bound to a shallow hydrogenic impurity located in a T-shaped quantum wire is calculated within the effective-mass approximation. The three-dimensional Schrodinger equation is solved by employing a method which does not rely on expansions of basis sets of wave functions. The electron binding energy is calculated as a function of the impurity position for different quantum wires. There is a competition between the T-quantum-wire states and the shallow-impurity states. Depending on the sizes of the T structure and on the position of the impurity, the electron becomes localized at the intersection of the two wells or around the impurity.
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页码:1 / 4
页数:4
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